In English

Design of drive stage of a Mosfet SiC converter

Orianne Guinard
Göteborg : Chalmers tekniska högskola, 2014. 61 s.
[Examensarbete på avancerad nivå]

This thesis is about studying the gate driving of a Mosfet. One step was to build a new circuit board for this investigation using the software Target. First experiments were made that aim to test the driving circuit using an R,C load instead of a Mosfet. When comparing with the simulation, it appears that the gate driver operates as quick and normal as expected when it is used with an R,C load unless R and C are very small (smaller than what it would be using a Mosfet). However, when it is connected to a Mosfet and an R,L load, it doesn't react as fast as expected with the increasing drain-source voltage. Finally, the last part but not the least of this project consists of investigating the switching losses in a Mosfet and an SiC Mosfet. The result are not conclusive so far since the current measurement is biased.

Nyckelord: Loss computation, Mosfet, Vehicle application, Power electronics, SiC Mosfet, Switching

Publikationen registrerades 2015-01-22. Den ändrades senast 2015-01-22

CPL ID: 211346

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