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LNA Design for Radio Navigation Satellite System Receivers

Göteborg : Chalmers tekniska högskola, 2013.
[Examensarbete på avancerad nivå]

This thesis work was performed at RUAG Space in Gothenburg aiming to design an L-band low-noise amplifier for GPS receiver applications. Compared to former design of such an LNA at RUAG improved RF performance and possibly a different amplifier topology are desired. In the case of a different amplifier topology a size reduction is of interest. Different alternatives for active components and amplifier topologies were considered and the work was focused on an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) called FPD750 from the company RF Micro Devices. Simulations of different LNA designs were performed in ADS and emphasis was put on a design including two FPD750 transistors in parallel, utilizing long source bond wires adding the extra source inductance needed for simultaneous noise and input matching. The LNA was realized as a hybrid design with bare-die transistor chips connected with bond wires and a prototype was fabricated in hardback PCB of TMM6 substrate. The final LNA has NF < 1 dB, gain of almost 20 dB and an input return loss of approximately 8 dB over the frequency band of interest (1.164-1.610 GHz). Consequently, the FPD750 transistor has potential to give low NF for L-band frequencies and is possible to use in this type of receiver application. Long source bond wires, acting as inductive source degenerations, are shown to be critical regarding high frequency stability and design of stability network needs careful consideration.

Publikationen registrerades 2013-06-04. Den ändrades senast 2013-06-04

CPL ID: 177888

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