In English

Assessment of Different Epitaxial Transfer Techniques for High Frequency III-V Devices

M. Hadi Tavakoli Dastjerdi
Göteborg : Chalmers tekniska högskola, 2010.
[Examensarbete på avancerad nivå]

The main aim of this work is to transfer the epitaxially grown, indium phosphide based material structure of heterostructure barrier varactor onto silicon substrate. However, these techniques can be also employed for other high frequency and optoelectronics devices such as laser diodes -hybird lasers-, transistors, photodetectors and photonics interconnects. Different wafer bonding techniques were explored and compared. Test diodes were fabricated on the bonded samples and electrical measurements (I-V and CV) were compared to the results with the reference samples on the original indium phosphide substrate. These measurements verified the quality of epitaxial transfer. Also in order to adapt the remaining processing steps to the initial wafer bonding, a study of ohmic contacts was performed to measure the specific contact resistances for alloyed and non-alloyed ohmic contacts.

Nyckelord: Heterostructure barrier varactor, wafer bonding, plasma activated direct bonding, III-V to silicon bonding, adhesive wafer bonding, III-V to glass wafer bonding, anodic bonding, ohmic contacts



Publikationen registrerades 2010-06-28. Den ändrades senast 2013-04-04

CPL ID: 123465

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